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The development of emerging memory technology with high density crossbar memory array is widely investigated for fulfilling the high demand on future applications, e.g. artificial intelligence, internet-of-things (IoT), edge computing, sensing with storage etc [1] – [3] . In the array, the sneak path current is a fatal problem subverting the read/write margin with the crossbar configuration, where the leakage current from neighboring cells results in operation errors. The 1T-1R or 1S-1M configuration with good sneak path current suppressing ability is utilized, while with high cost and fabrication complexity. The self-rectified memristor with simple stacking fabrication process is presented as the highly scalable non-volatile memory for storage and computing configurations ( Fig. 1 ). |
