94 GHz Amplifier in SiGe Technology

Autor: Wolfgang Winkler, Ch. Scheytt, F. Korndorfer, Johannes Borngraber
Rok vydání: 2008
Předmět:
Zdroj: 2008 38th European Microwave Conference.
DOI: 10.1109/eumc.2008.4751414
Popis: A 94 GHz amplifier fabricated in 0.25 mum SiGe BiCMOS technology and using a novel transmission line structure is presented. The circuit is a two-stage cascode topology utilizing transmission lines for input, output and inter-stage matching. The amplifier is designed for high gain, minimum noise figure and low power consumption. Measurements show a gain of 16.2 dB and a noise figure of 10.6 dB at 94 GHz. The power consumption is 61 mW from a 3.5 Volt supply. The design-style with top-plate ground used in this amplifier is a good candidate for IC-designs at even higher frequencies in silicon-based technologies.
Databáze: OpenAIRE