Understanding the Charge Transport Mechanism in MoS2 Transistors with Graphene Electrodes
| Autor: | Do Kyung Hwang, Jisu Jang |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Graphene Schottky barrier Transistor Fermi level General Physics and Astronomy Charge (physics) 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences law.invention chemistry.chemical_compound symbols.namesake chemistry law 0103 physical sciences symbols Optoelectronics Field-effect transistor Electronics 0210 nano-technology business Molybdenum disulfide |
| Zdroj: | Journal of the Korean Physical Society. 77:1008-1011 |
| ISSN: | 1976-8524 0374-4884 |
| Popis: | Two-dimensional transition-metal dichalcogenides (TMDs) have emerged as promising candidates for next-generation electronics owing to their excellent semiconducting properties. However, metal-TMDs junctions are of particular interest as they have become a major limiting factors to further improvements in TMD-based device performance. Here, we investigate the charge transport of MoS2 transistors contacted with Ti/Au and graphene electrodes. Compared to a conventional Ti/Au contact, the MoS2 devices with graphene electrodes exhibit improved electrical properties (field-effect mobility, subthreshold swing, and low off-state current). Such a device improvement could be attributed to efficient electron injection arising from the tunable graphene Fermi level as well as the high hole barrier height, which significantly reduces the off-state current caused by hole transport. Furthermore, a simple Schottky barrier model has been employed to explain the observed transfer characteristic of MoS2 transistors with two different contacts. Our finding provides significant insights into the understanding of charge transport in TMD-based transistors for future 2D electronics. |
| Databáze: | OpenAIRE |
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