Modeling of power semiconductor devices, problems, limitations and future trends

Autor:	D. Siber, B. Fatemizadeh, P.O. Lauritzen
Rok vydání:	2002
Předmět:	business.industry Computer science Modelling methods Power electronics Spice Electrical engineering Semiconductor device modeling Electronic engineering Power semiconductor device Computer aided simulation Semiconductor device business Power (physics)
Zdroj:	5th IEEE Workshop on Computers in Power Electronics.
DOI:	10.1109/cipe.1996.612346
Popis:	The problems and future trends of the modeling of power devices are reviewed and the different modeling methods compared as to their compromise between convenience, accuracy, numerical efficiency and accuracy in implementing physical effects. Many of the existing power device models are listed, and their main features are identified and compared.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3b47d13a7381d2e7b241611721c5dfae https://doi.org/10.1109/cipe.1996.612346 Zobrazit plný text záznamu