Dependence on substrate bias of the effective mass and dingle temperature of electrons in the surface inversion layer of silicon
| Autor: | Ting-Kuo Lee, Jennifer J. Quinn, Amir A. Lakhani |
|---|---|
| Rok vydání: | 1976 |
| Předmět: |
Condensed matter physics
Silicon Chemistry Cyclotron chemistry.chemical_element Quantum oscillations Surfaces and Interfaces Electron Condensed Matter Physics Gate voltage Surfaces Coatings and Films law.invention Magnetic field Effective mass (solid-state physics) Amplitude law Materials Chemistry Atomic physics |
| Zdroj: | Surface Science. 58:213-216 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/0039-6028(76)90140-0 |
| Popis: | The amplitude of the quantum oscillations in the magnetoconductance of a silicon inversion layer has been studied as a function of gate voltage V g , for different values of the temperature T , applied magnetic field strength H and substrate bias V s . By analyzing the amplitude of the oscillations at fixed V g and V g as a function of T and H , the dependence of the cyclotron effective mass m ∗ and the Dingle temperature T D on V g and V s can be obtained. The dependence of m ∗ on V g for different values of V s is compared with the prediction of theory. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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