Studies on 0.96 and 0.84 eV photoluminescence emissions in GaAs epilayers grown on Si
| Autor: | Ying Gao, Jiachang Liang, Junhua Jiang, Jialong Zhao |
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| Rok vydání: | 1996 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 79:7173-7176 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.361489 |
| Popis: | Studies on the 0.96 and 0.84 eV photoluminescence (PL) emissions at various temperatures in GaAs epilayers grown on Si with [As]/[Ga]=20–50 by metalorganic chemical vapor deposition were made. In terms of an Arrhenius plot and configurational coordinate model, the thermal activation energy and Franck–Condon (FC) shift for the 0.96 eV emission band were obtained by measuring the variations in its PL intensity and full width at half‐maximum with temperature, respectively. The dependence on PL intensity versus temperature of the 0.84 eV PL emission could not be fitted with an Arrhenius plot. Instead, it could be fitted with the formula used for amorphous semiconductors or localized states which allowed us to relate this emission with the presence of defects in the heteroepitaxial GaAs layers grown on Si investigated. Taking into account the FC and band‐gap shifts, the energy relationships of the transitions from donor to acceptor, from conduction band to acceptor, and from donor to valence band were reformul... |
| Databáze: | OpenAIRE |
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