GaAs MESFET Oscillator Design Using Large-Signal S-Parameters

Autor:	R.J. Gilmore, F.J. Rosenbaum
Rok vydání:	2005
Předmět:	Physics business.industry dBm Analytical technique Electrical engineering Delay line oscillator Hardware_PERFORMANCEANDRELIABILITY Signal Power (physics) Vackář oscillator Hardware_INTEGRATEDCIRCUITS Electronic engineering Embedding MESFET business
Zdroj:	MTT-S International Microwave Symposium Digest.
DOI:	10.1109/mwsym.1983.1130884
Popis:	A novel analytical technique is presented which uniquely determines the embedding network required for a MESFET oscillator to deliver specified power to an arbitrary load. An experimental 5.3 GHz oscillator provided 24 dBm with 35% efficiency.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3b3d2f71e67d2491274c469dec65c8ef https://doi.org/10.1109/mwsym.1983.1130884 Zobrazit plný text záznamu