Mechanism of Triple Ions Effect in GeSO Resistance Random Access Memory

Autor:	Ya-Chi Hung, Tsung-Ming Tsai, Kuan-Chang Chang, Yu-Ting Su, Ting-Chang Chang, Hua-Ching Lin, Rui Zhang, Yong-En Syu, Simon M. Sze, Hsin-Lu Chen, Wei Zhang, Min-Chen Chen, Jin-Cheng Zheng, Ying Hu
Rok vydání:	2015
Předmět:	Non-volatile memory Chemistry Schottky diode Electrical and Electronic Engineering Atomic physics Thermal conduction Molecular physics Reset (computing) Chemical reaction Space charge Electronic Optical and Magnetic Materials Voltage Resistive random-access memory
Zdroj:	IEEE Electron Device Letters. 36:552-554
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2015.2424996
Popis:	In this letter, a triple-ion redox reaction has been proposed and investigated in GeSO-based resistance random access memory. Continuous multiresistance states can be obtained by applying a series of increasing cutoff voltages in both set and reset processes. Using data retention tests, these multistates in the set and reset processes were confirmed to be stable. The conduction mechanism gradually changed during reset process from space charge limited current to Schottky emission. A triple-ion reaction model has been proposed to reveal the chemical reaction properties in the resistive switching process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3b347284fdf7d07664683629143aacfd https://doi.org/10.1109/led.2015.2424996 Zobrazit plný text záznamu