Strain Relaxation Induced Micro-Photoluminescence haracteristics of a Single InGaN-based Nanopillar Fabricated by Focused Ion Beam Milling

Autor:	Yuh-Renn Wu, S. C. Wang, Wen-Yung Yeh, His Hsuan Yen, Chih Chiang Kao, Han Wei Yang, Peichen Yu, C. H. Chiu, Tien-Chang Lu, Jui-Yuan Chen, Hao-Chung Kuo
Rok vydání:	2008
Předmět:	Crystallography Materials science Strain (chemistry) business.industry Relaxation (physics) Optoelectronics business Focused ion beam Micro photoluminescence Nanopillar
Zdroj:	ECS Transactions. 16:139-143
ISSN:	1938-6737 1938-5862
Popis:	A free-standing nanopillar with a diameter of 300 nm, and a height of 2 μm is successfully demonstrated by focused ion beam milling. The measured micro-photoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells shows a blue shift of 68 meV in energy with a broadened full-width at half maximum, ~200meV. Moreover, the power-dependent μ-PL measurement confirms that the strain-relaxed emission region of the nanopillar exhibits a higher radiative recombination rate than that of the as-grown structure, indicating great potential for realizing high-efficiency nano devices in the UV/blue wavelength range.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3b17a814aa73b5a2c77cb038020c586e https://doi.org/10.1149/1.2983169 Zobrazit plný text záznamu