Strain Relaxation Induced Micro-Photoluminescence haracteristics of a Single InGaN-based Nanopillar Fabricated by Focused Ion Beam Milling
Autor: | Yuh-Renn Wu, S. C. Wang, Wen-Yung Yeh, His Hsuan Yen, Chih Chiang Kao, Han Wei Yang, Peichen Yu, C. H. Chiu, Tien-Chang Lu, Jui-Yuan Chen, Hao-Chung Kuo |
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Rok vydání: | 2008 |
Předmět: | |
Zdroj: | ECS Transactions. 16:139-143 |
ISSN: | 1938-6737 1938-5862 |
Popis: | A free-standing nanopillar with a diameter of 300 nm, and a height of 2 μm is successfully demonstrated by focused ion beam milling. The measured micro-photoluminescence (μ-PL) from the embedded InGaN/GaN multiple quantum wells shows a blue shift of 68 meV in energy with a broadened full-width at half maximum, ~200meV. Moreover, the power-dependent μ-PL measurement confirms that the strain-relaxed emission region of the nanopillar exhibits a higher radiative recombination rate than that of the as-grown structure, indicating great potential for realizing high-efficiency nano devices in the UV/blue wavelength range. |
Databáze: | OpenAIRE |
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