High excitation power photoluminescence studies of ultra-low density GaAs quantum dots
| Autor: | V. Paulava, David Sonnenberg, Ch. Heyn, Wiebke Hansen, A. Graf |
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| Rok vydání: | 2013 |
| Předmět: |
Photoluminescence
Materials science Condensed matter physics Condensed Matter::Other business.industry Physics::Optics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Epitaxy Power (physics) Condensed Matter::Materials Science Quantum dot Low density Optoelectronics Optical emission spectroscopy Emission spectrum business Excitation |
| Zdroj: | AIP Conference Proceedings. |
| ISSN: | 0094-243X |
| DOI: | 10.1063/1.4848470 |
| Popis: | We fabricate GaAs epitaxial quantum dots (QDs) by filling of self-organized nanoholes in AlGaAs. The QDs are fabricated under optimized process conditions and have ultra-low density in the 106 cm−2 regime. At low excitation power the optical emission of single QDs exhibit sharp excitonic lines, which are attributed to the recombination of excitonic and biexcitonic states. High excitation power measurements reveal surprisingly broad emission lines from at least six QD shell states. |
| Databáze: | OpenAIRE |
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