Structural and Thermoelectric Properties of Solid–Liquid In4Se3-In Composite
| Autor: | Taras Parashchuk, Artur Kosonowski, Thang Bach Phan, Son D. N. Luu, Krzysztof T. Wojciechowski |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Composite number chemistry.chemical_element Sintering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Thermal conductivity chemistry Electrical resistivity and conductivity Vacancy defect Phase (matter) 0103 physical sciences Thermoelectric effect Materials Chemistry Electrical and Electronic Engineering Composite material 0210 nano-technology Indium |
| Zdroj: | Journal of Electronic Materials. 48:5418-5427 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-019-07399-w |
| Popis: | The aim of our work was to investigate thermoelectric properties of a composite of solid In4Se3 and solid or liquid indium. Polycrystalline In4Se3-In composites were prepared by a direct reaction of elements, powdering of products and sintering powders by pulsed electric current sintering technique. Microstructural and structural properties of obtained composites were analyzed using SEM + EDX and XRD techniques. Electrical transport properties and thermal conductivity were measured over a temperature range of 323 K ≤ T ≤ 673 K. Results show that the electrical conductivity of composite increases about four times in comparison with that of pristine In4Se3. The thermal conductivity decreases in a systematic way with the increase of In content and reaches a value of about 0.44 W m−1 K−1. As a result, the addition of indium enhances the thermoelectric figure of merit ZT from 0.8 to 1.2 at 673 K. However, we found that the melting of indium at about 430 K has no significant influence on thermoelectric properties of composites. We assume that the improvement of electrical properties is mainly due to the formation of point defects in In4Se3 phase and metallic properties of the In phase. To analyze formation energies of possible defects in In4Se3 structure, DFT calculations within the molecular cluster model were carried out. It was found that the In interstitial atoms are energetically more favorable than the formation of Se vacancy in In4Se3 structure. |
| Databáze: | OpenAIRE |
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