AFM-based fabrication of Si nanostructures
| Autor: | P. J. McMarr, Paul M. Campbell, E.S. Snow |
|---|---|
| Rok vydání: | 1996 |
| Předmět: |
Fabrication
Materials science Nanostructure Silicon Oxide chemistry.chemical_element Nanotechnology Local oxidation nanolithography Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry.chemical_compound Nanolithography chemistry Etching (microfabrication) Field-effect transistor Electrical and Electronic Engineering |
| Zdroj: | Physica B: Condensed Matter. 227:315-317 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/0921-4526(96)00429-2 |
| Popis: | We report the fabrication of nanometer-scale Si structures by using an atomic force microscope to write surface-oxide patterns by the local anodic oxidation of a H-passivated Si (100) surface. These oxide patterns were used as masks for selective etching of the silicon. Side-gated Si field effect transistors with critical features as small as 30 nm have been fabricated by this method. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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