Solid-state selenization of printed Cu(In,Ga)S2 nanocrystal layer and its impact on solar cell performance
| Autor: | Kyoung Jun Lee, Chan-Wook Jeon, Yang Hwi Cho, Kyung Min Ahn, Deok-In Kim, KyeUng Lee, Tae Seok Lee, Jae Hong Kim, Sang-Wook Park, Yeokwon Yoon |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment Metallurgy Analytical chemistry Solid-state chemistry.chemical_element Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Boundary layer chemistry.chemical_compound chemistry Nanocrystal law Solar cell Carbon Short circuit Layer (electronics) Sulfoselenide |
| Zdroj: | Solar Energy Materials and Solar Cells. 125:66-71 |
| ISSN: | 0927-0248 |
| DOI: | 10.1016/j.solmat.2014.02.019 |
| Popis: | Cu(In,Ga)S 2 nanopowder was printed on Mo-coated sodalime glass substrates and selenized from a Se-coated cover glass. The selenized Cu(In,Ga)(Se,S) 2 film consisted of three layers with a different morphologies and micro-structures. Although the top layer showed large grains recrystallized from nanocrystals, the bottom layer was almost identical to the original precursor. The middle layer, as a thin boundary layer was found to be a mixture of carbon and Cu sulfoselenide. At a higher Se thickness (>1.2 μm), a lower fill factor and short circuit current density were obtained, which might result from the accumulation of a Cu secondary phase. The solar cell, which consisted of Al 2 O 3 :ZnO/i-ZnO/CdS/Cu(In,Ga)(S,Se)/Mo/glass using the selenized absorber, showed the following properties: efficiency=8.28%, J sc =26.14 mA/cm 2 , V oc =0.483 V, and fill factor=65.58% for AMG1.5 at 25 °C. |
| Databáze: | OpenAIRE |
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