Reduction in Specific Contact Resistivity to $ \hbox{n}^{+}$ Ge Using $\hbox{TiO}_{2}$ Interfacial Layer

Autor:	Arunanshu M. Roy, Krishna C. Saraswat, J.-Y. Jason Lin
Rok vydání:	2012
Předmět:	Reduction (complexity) Materials science Condensed matter physics Electrical resistivity and conductivity Contact resistance Doping Electronic engineering Electron Electrical and Electronic Engineering Conductivity Layer (electronics) Electronic Optical and Magnetic Materials
Zdroj:	IEEE Electron Device Letters. 33:1541-1543
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2012.2214758
Popis:	We report a metal-insulator-semiconductor (MIS) contact using a TiO2 interfacial layer on highly doped n+ Ge to overcome the problem of metal-Fermi-level pinning on Ge, which results in a large electron barrier height. A specific contact resistivity of 1.3 × 10-6 Ω·cm2 was achieved, which represents a 70× reduction from conventional contacts. For the first time, interfacial layer conductivity is experimentally identified as an important consideration for high-performance MIS contacts. New insights on the mechanism responsible for contact resistance reduction are presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3af0d7dc0fd673a92e95d0b00f1c9d90 https://doi.org/10.1109/led.2012.2214758 Zobrazit plný text záznamu