SEM, Dielectric, Pyroelectric, and Piezoelectric Response of Thin Epitaxial AlN Films Grown on SiC/Si Substrate

Autor:	S. A. Kukushkin, N. V. Komarov, A. L. Dudin, Dmitry A. Kiselev, O. N. Sergeeva, Alexander V. Solnyshkin, A. A. Bogomolov, E. Yu. Kaptelov, I. P. Pronin, S. V. Senkevich, D. M. Krasovitsky, S. V. Ksenich
Rok vydání:	2015
Předmět:	Materials science business.industry chemistry.chemical_element Dielectric Nitride Condensed Matter Physics Epitaxy Piezoelectricity Electronic Optical and Magnetic Materials Pyroelectricity Full width at half maximum chemistry Aluminium Optoelectronics business Molecular beam epitaxy
Zdroj:	Ferroelectrics. 477:121-130
ISSN:	1563-5112 0015-0193
DOI:	10.1080/00150193.2015.1000144
Popis:	Structural characterization of the epitaxial thin aluminum nitride (AlN) 1-μm-thick films grown on SiC/(111)Si substrate by molecular beam epitaxy method was done. The films are shown to be single crystals of (0002) orientation with parameter full width half maximum FWHMωθ = 0.5°. A comparative study of the film electrical properties with the films grown by chloride vapor-phase epitaxy has revealed the difference in polar axis orientation, pyroelectric response, and piezoelectric hystograms.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3aec31ba53c3a6dd09d7613240e2bebd https://doi.org/10.1080/00150193.2015.1000144 Zobrazit plný text záznamu