Ion-Bombarded and Plasma-Passivated Charge Storage Layer for SONOS-Type Nonvolatile Memory

Autor:	Tien-Sheng Chao, Chi Chang Wu, Sheng Hsien Liu, Wen Luh Yang, Yu-Hsien Lin
Rok vydání:	2014
Předmět:	Trap (computing) Non-volatile memory Passivation Chemistry Analytical chemistry Trapping Plasma Electrical and Electronic Engineering Layer (electronics) Flash memory Electronic Optical and Magnetic Materials Ion
Zdroj:	IEEE Transactions on Electron Devices. 61:3179-3185
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2014.2341629
Popis:	This paper examined the application of ion bombardment (IB) and NH 3 plasma treatment (PT) techniques in fabricating a high-performance Si 3 N 4 charge storage layer. The IB technique can be used for creating numerous additional trap sites in the storage layer to enhance charge trapping efficiency and also causes changes in trap centroid location. In addition, the effect of centroid location on operation efficiency and reliability was investigated. Using gate-sensing and channel-sensing analysis, the changes in centroid location were demonstrated. In addition, the energy-level distribution of trap sites was clearly delineated by performing discharge-based multipulse analysis. The NH 3 PT technique can substantially passivate IB-induced shallow trap sites to increase data retention time. The influence of the NH 3 PT time on the memory characteristics of an IB-induced Si 3 N 4 sample was investigated. The optimal characteristics of an ion-bombarded and plasma-passivated Si 3 N 4 storage layer are presented. Compared with the conventional Si 3 N 4 storage layer, the optimal ion-bombarded and plasma-passivated Si 3 N 4 sample exhibited higher operation efficiency and superior reliability.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3aeae78702bfcec6a665b55ca1477a14 https://doi.org/10.1109/ted.2014.2341629 Zobrazit plný text záznamu