Strong green electroluminescence from silicon based oxide films
| Autor: | Lanjian Zhuge, Y.M Dong, Y.H Yu, X.M Wu, W.G Yao, Z.Y Ning, N.Y Tang, C.N Ye |
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| Rok vydání: | 2002 |
| Předmět: |
Photoluminescence
Materials science Silicon business.industry Doping Oxide chemistry.chemical_element Biasing Surfaces and Interfaces General Chemistry Electroluminescence Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound Optics chemistry Materials Chemistry Optoelectronics Crystalline silicon business Silicon oxide |
| Zdroj: | Surface and Coatings Technology. 154:82-87 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/s0257-8972(01)01704-2 |
| Popis: | Electroluminescence (EL) devices have been fabricated on three types of silicon based oxide films (Ge–SiO 2 films, Si–SiO 2 films, and Al–SiO 2 films). Visible EL from the devices can be seen with the naked eye when the bias voltage greater than a critical value is applied. Each EL spectrum is found to have only one luminescence band peaked at 510 nm and the peak position does not shift with the bias voltage, annealing temperature, and the type of doping atoms in Si oxide matrixes. Spectra analyses suggest that the origin of EL can be attributed to the luminescence centers (LCs) in the silicon oxide films. |
| Databáze: | OpenAIRE |
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