Growth and magnetic properties of IV-VI diluted magnetic semiconductor Ge1−xCrxTe

Autor:	Hironori Asada, T. Irisa, Tsuyoshi Koyanagi, S. Miyawaki, T. Taya, Y. Fukuma
Rok vydání:	2006
Předmět:	Condensed Matter::Materials Science Magnetization Materials science Condensed matter physics Ferromagnetism Electron diffraction Hall effect Band gap X-ray crystallography General Physics and Astronomy Magnetic semiconductor Molecular beam epitaxy
Zdroj:	Journal of Applied Physics. 99:08D508
ISSN:	1089-7550 0021-8979
Popis:	IV-VI diluted magnetic semiconductor Ge1−xCrxTe films were grown on BaF2 substrates by molecular-beam epitaxy. The Ge1−xCrxTe film up to x=0.103 is single phase as determined by reflection high-energy electron diffraction and x-ray diffraction measurements. The optical band gap decreases with increasing Cr composition. Ferromagnetic order of the Ge1−xCrxTe films is characterized by direct magnetization and anomalous Hall effect measurements.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3ac7a69f7028ee9b846203691477e17c https://doi.org/10.1063/1.2163830 Zobrazit plný text záznamu