Shallow boron implantations in Ge and the role of the pre-amorphization depth

Autor:	Jozefien Goossens, Gijs Brouwers, Marie-Laure David, Alessandra Satta, Frédéric Pailloux, Marc Meuris, Eddy Simoen, Trudo Clarysse, Brigitte Parmentier, Wilfried Vandervorst
Rok vydání:	2008
Předmět:	Materials science Silicon Mechanical Engineering Analytical chemistry chemistry.chemical_element Mineralogy Germanium Condensed Matter Physics BORO Ion implantation chemistry Mechanics of Materials General Materials Science Diffusion (business) Boron Sheet resistance Extrinsic semiconductor
Zdroj:	Materials Science in Semiconductor Processing. 11:368-371
ISSN:	1369-8001
Popis:	The impact of the Ge pre-amorphization conditions on shallow B profiles, resulting from a 1 keV implantation in n-type Ge and a 500 °C 1 min rapid thermal anneal, is investigated. In general, an increase of the sheet resistance with lower Ge energy is observed. There is some evidence for tail diffusion, enhancing slightly the junction depth and reducing its steepness. This could point to end-of-range-mediated transient-enhanced diffusion (TED) of B in Ge. It is clear that for this to happen, a pre-amorphization is required which contains completely the B profile.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3ac669775221b3e70b390ec6ff5be256 https://doi.org/10.1016/j.mssp.2008.09.006 Zobrazit plný text záznamu Full Text from ScienceDirect