Tunneling Field-Effect Transistor (TFET) with Novel Ge/In0.53Ga0.47As Tunneling Junction

Autor:	C. K. Chia, Genquan Han, Pengfei Guo, Yuanbing Cheng, Yee-Chia Yeo, Yue Yang
Rok vydání:	2013
Předmět:	Materials science business.industry Transistor Doping chemistry.chemical_element Heterojunction Germanium Substrate (electronics) law.invention chemistry X-ray photoelectron spectroscopy law Optoelectronics Electronic band structure business Quantum tunnelling
Zdroj:	ECS Transactions. 50:971-978
ISSN:	1938-6737 1938-5862
Popis:	In this work, high quality epitaxial germanium (Ge) was successfully grown on In0.53Ga0.47As substrate using a metal-organic chemical vapor deposition (MOCVD) tool. The energy band alignment between the Ge layer and In0.53Ga0.47As was investigated using high-resolution x-ray photoelectron spectroscopy (XPS) and the valence band offset was determined to be 0.5 {plus minus} 0.1 eV. Therefore, Ge/In0.53Ga0.47As heterojunction has a staggered band alignment at the interface, which is a good candidate for the tunneling junction in tunneling field-effect transistor (TFET). Lateral TFET with in situ doped P+ Ge-source In0.53Ga0.47As-channel using a gate-last process was demonstrated for the first time.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3ac101048d276a995e1cb99de5566262 https://doi.org/10.1149/05009.0971ecst Zobrazit plný text záznamu