Tunneling Field-Effect Transistor (TFET) with Novel Ge/In0.53Ga0.47As Tunneling Junction
Autor: | C. K. Chia, Genquan Han, Pengfei Guo, Yuanbing Cheng, Yee-Chia Yeo, Yue Yang |
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Rok vydání: | 2013 |
Předmět: | |
Zdroj: | ECS Transactions. 50:971-978 |
ISSN: | 1938-6737 1938-5862 |
Popis: | In this work, high quality epitaxial germanium (Ge) was successfully grown on In0.53Ga0.47As substrate using a metal-organic chemical vapor deposition (MOCVD) tool. The energy band alignment between the Ge layer and In0.53Ga0.47As was investigated using high-resolution x-ray photoelectron spectroscopy (XPS) and the valence band offset was determined to be 0.5 {plus minus} 0.1 eV. Therefore, Ge/In0.53Ga0.47As heterojunction has a staggered band alignment at the interface, which is a good candidate for the tunneling junction in tunneling field-effect transistor (TFET). Lateral TFET with in situ doped P+ Ge-source In0.53Ga0.47As-channel using a gate-last process was demonstrated for the first time. |
Databáze: | OpenAIRE |
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