Modelling GaN-HEMT Dynamic ON-state Resistance in High Frequency Power Converter
| Autor: | Arnaud Videt, Nadir Idir, Ke Li, Mark Johnson, Paul Evans |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science 020208 electrical & electronic engineering Value (computer science) 02 engineering and technology High-electron-mobility transistor 01 natural sciences Measure (mathematics) law.invention law Electrical network 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electronic engineering Voltage source State (computer science) Transient (oscillation) Voltage |
| Zdroj: | 2020 IEEE Applied Power Electronics Conference and Exposition (APEC). |
| DOI: | 10.1109/apec39645.2020.9124513 |
| Popis: | In order to model GaN device dynamic R DSon value due to trapped charge, a measurement circuit to accurately measure device dynamic R DSon value under different OFF-state time and ON-state time is at first proposed. Based on measurement results, an analytical model with different cells is proposed to represent dynamic R DSon evolution. It is then represented as a behavioural voltage source to compensate device ON-state V DS voltage, which can be implemented easily into device manufacturer model in Spice-type electrical circuit simulator. The model is then validated by comparing with the measurement on device dynamic R DSon value of different switching frequencies, where the model agrees with experimental results on both transient and stabilized dynamic R DSon value. |
| Databáze: | OpenAIRE |
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