| Autor: |
Hiroshi Fukumoto, Shohei Imai, Motoyoshi Koyanagi, H. Ohtsuka, Hiroaki Maehara, Akira Inoue, K. Yamanaka, Akira Ohta |
| Rok vydání: |
2014 |
| Předmět: |
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| Zdroj: |
2014 IEEE MTT-S International Microwave Symposium (IMS2014). |
| DOI: |
10.1109/mwsym.2014.6848263 |
| Popis: |
A high power internally matched GaN-HEMT amplifier at Ku-Band was successfully developed. In order to achieve high output power over the targeted bandwidth, a new balancing network is added to the gate side matching circuit. At 24 V drain supply voltage, the HPA delivers 80W of CW RF power with a PAE exceeding 22% over the 13.75-14.5 GHz frequency range. To the best of authors' knowledge, this output power is state-of-the-art for CW operation in this frequency band. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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