High-Speed Low-Noise InAs/InAlGaAs/InP 1.55-$\mu{\rm m}$ Quantum-Dot Lasers
| Autor: | V. Ivanov, D. Gready, Gadi Eisenstein, Johann Peter Reithmaier, C. Gilfert |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Relative intensity noise business.industry Bandwidth (signal processing) dBc Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Semiconductor laser theory Gallium arsenide law.invention chemistry.chemical_compound Optics chemistry Quantum dot laser Quantum dot law Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Photonics Technology Letters. 24:809-811 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2012.2188506 |
| Popis: | We present the static and dynamic properties of InAs quantum-dot (QD) lasers emitting near 1.55 μm. The used laser material comprises four QD layers and exhibits a high modal gain of about 40 cm-1. The 340-μ.m-long lasers show a room temperature threshold current of 38 mA and a maximum output power of 16 mW. The small signal modulation response is highly damped and carrier transport limited with a moderate 3-dB bandwidth of 5 GHz. This is accompanied by a flat relative intensity noise spectrum at a low level of -150 dBc/Hz. Neverthe- less, the laser exhibits record large signal modulation capabilities for a 1.5-μ.m QD laser: 15 Gb/s with a 4-dB on/off ratio. |
| Databáze: | OpenAIRE |
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