Anisotropically etched Si surface and the electrical properties of Si/HgCdTe heterostructures
| Autor: | T.Ya. Gorbach, S.V. Svechnikov, Petro Smertenko, G. Wisz, Marian Kuzma |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Silicon business.industry Metals and Alloys Mineralogy chemistry.chemical_element Heterojunction Surfaces and Interfaces Epitaxy Isotropic etching Surfaces Coatings and Films Electronic Optical and Magnetic Materials Pulsed laser deposition chemistry Electrical resistivity and conductivity Materials Chemistry Optoelectronics Wafer Thin film business |
| Zdroj: | Thin Solid Films. 428:165-169 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(02)01169-0 |
| Popis: | We used (001)-oriented silicon wafers, chemically etched under special conditions, as substrates for laser epitaxy of HgCdTe. Three types of Si surface with different microrelief were obtained: flat, pyramid-like and plate-like. Thin films of HgCdTe were deposited using a YAG:Nd 3+ laser. The electrical properties of the structures under investigation were analysed on the basis of current–voltage characteristics. These characteristics are interpreted in relation to the structural properties of the Si substrate surface. The carrier transport mechanisms for different HgCdTe/Si interfaces are presented. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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