Deposited dielectrics on metal thin films using silicon and glass substrates for hot electron-induced electrochemiluminescence
| Autor: | Tiina Ylinen-Hinkka, Antti J. Niskanen, Sami Franssila, Sakari Kulmala, Matti Pusa |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
inorganic chemicals
Auxiliary electrode Working electrode Silicon business.industry Silicon dioxide Inorganic chemistry Metals and Alloys chemistry.chemical_element Surfaces and Interfaces Chemical vapor deposition Dielectric Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Atomic layer deposition chemistry Electrode Materials Chemistry Optoelectronics business |
| Zdroj: | Thin Solid Films. 519:430-433 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2010.07.027 |
| Popis: | Electrochemiluminescence by tunnel emission of hot electrons into aqueous solution is a sensitive method for detection of luminophores e.g. rare-earth chelates, which may be used as labels in bioassays. Electrons are injected into solution from an insulating film-coated working electrode, working against a platinum counter electrode. Conductive silicon electrodes with various tunnel dielectric materials e.g. thermal oxide have been used in previous work. In this paper we explore the use of metal thin film electrodes on silicon and glass substrates, using tunneling dielectrics of aluminum oxide and silicon dioxide made by the low-temperature processes of atomic layer deposition or plasma-enhanced chemical vapor deposition. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect