TEM Study of the microstructure of melt grown FeGe2 single crystals
| Autor: | V. Yu. Kolosov, T. I. Papushina, A. Yu. Bunkin |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Range (particle radiation)
Materials science Doping Stacking 02 engineering and technology Edge (geometry) 021001 nanoscience & nanotechnology Microstructure 01 natural sciences Surfaces Coatings and Films Transmission electron microscopy 0103 physical sciences Composite material Thin film Dislocation 010306 general physics 0210 nano-technology |
| Zdroj: | Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 11:1039-1041 |
| ISSN: | 1819-7094 1027-4510 |
| DOI: | 10.1134/s102745101705024x |
| Popis: | The results of transmission electron microscopy and metallographic investigation of the microstructure of FeGe2 single crystals are reported. The main defects revealed are edge dislocations, dislocation loops, and stacking faults located predominantly in close-packed crystallographic planes. The spatial distribution of structural defects is shown to correlate with the specific features of the growth technology. The dislocation density in the samples studied is about 104 cm–2 and is almost constant in a wide pulling-rate range. Small amounts of doping elements (Co, Al, Sn) do not significantly change the microstructure, and thus high quality crystals can be obtained after corresponding correction of the growth parameters. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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