Investigation of Impact Ionization in Strained-Si n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
| Autor: | Po Chin Huang, Ting Kuo Kang, Shoou-Jinn Chang, Yu Huan Sa, San Lein Wu |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Electron mobility
Materials science Physics and Astronomy (miscellaneous) business.industry Scattering Transistor General Engineering Analytical chemistry General Physics and Astronomy law.invention Metal Impact ionization law visual_art Electric field visual_art.visual_art_medium Optoelectronics Field-effect transistor business Voltage |
| Zdroj: | Japanese Journal of Applied Physics. 47:2664-2667 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.47.2664 |
| Popis: | In this study, we have systematically re-investigated impact ionization (II) characteristics in strained-Si n-channel metal–oxide–semiconductor field-effect transistors (nMOSFETs) with different strained-Si cap layers at two Ge contents. The strained-Si nMOSFETs can supply further II experimental conditions with band-gap energy narrowing, higher electron mobility, and greater scattering caused by the Ge out-diffusion effect. Despite such II conditions, no marked difference in the II multiplication coefficient as a function of drain voltage, M-1(VD), between unstrained- and strained-Si nMOSFETs is found for widely accepted strain-enhanced II efficiency, implying that II efficiency depends on the maximum channel electric field Em in the pinch-off region. Through the translation of M-1(VD) into M-1(Em), it is found that strain-enhanced II efficiency is attributed to the narrowing of band-gap energy, taking into account the difference in source/drain junction depth between unstrained- and strained-Si nMOSFETs. |
| Databáze: | OpenAIRE |
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