Characteristics of GdGaO grown by MBE
| Autor: | P. Longo, C.R. Stanley, Gary W. Paterson, Alan J. Craven, W. Reid, Martin Christopher Holland, A. R. Long, I.G. Thayne, R. Gregory |
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| Rok vydání: | 2009 |
| Předmět: |
Scattering
Chemistry Electron energy loss spectroscopy Analytical chemistry Substrate (electronics) Dielectric Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials symbols.namesake Crystallinity symbols Rutherford scattering Electrical and Electronic Engineering Sheet resistance Molecular beam epitaxy |
| Zdroj: | Microelectronic Engineering. 86:244-248 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2008.01.043 |
| Popis: | Ga"2O"3/GdGaO dielectric stacks have been grown on GaAs for MOSFETs. This paper highlights variations in the characteristics of GdGaO as the Gd flux, Ga"2O flux and substrate temperature are changed. The growth rate, composition, crystallinity are discussed and the sheet resistance of final MOSFET structures are presented. The Gd compositional variation with depth is examined using Rutherford back scattering (RBS) and electron energy loss spectroscopy (EELS). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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