High-Performance Normally-OFF GaN MIS-HEMTs Using Hybrid Ferroelectric Charge Trap Gate Stack (FEG-HEMT) for Power Device Applications
| Autor: | Huan-Chung Wang, Ping-Cheng Han, Quang Ho Luc, Franky Lumbantoruan, Po-Chun Chang, Kun-Sheng Yang, Chia-Hsun Wu, Yen-Ku Lin, Yueh-Chin Lin, Yu-Hsuan Ho, Edward Yi Chang, Shih-Chien Liu, Jian-You Chen, Ting-En Hsieh |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Electron mobility Materials science Condensed matter physics Gallium nitride Charge (physics) 02 engineering and technology High-electron-mobility transistor 021001 nanoscience & nanotechnology 01 natural sciences Ferroelectricity Electronic Optical and Magnetic Materials Threshold voltage chemistry.chemical_compound chemistry Electric field 0103 physical sciences Electrical and Electronic Engineering 0210 nano-technology Current density |
| Zdroj: | IEEE Electron Device Letters. 39:991-994 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2018.2825645 |
| Popis: | A GaN metal-insulator-semiconductor-high electron mobility transistor (HEMT) using hybrid ferroelectric charge trap gate stack (FEG-HEMT) is demonstrated for normally-OFF operation. The ferroelectric (FE) polarization increases the number of trapped charges in the HfON charge trapping layer, leading to high positive threshold voltage ( ${V}_{\textsf {th}}$ ) shift for the normally-OFF device. Besides, under the positive bias temperature instability (PBTI) test, the internal electric field induced by FE polarization causes smoother slope of the conduction band in FE gate stack, resulting in better ${V}_{\textsf {th}}$ stability. With the proposed hybrid FE charge trap gate stack, the device exhibits a high ${V}_{\textsf {th}}$ of +2.71 V at ${I}_{\textsf {DS}} = \textsf {1}\,\,\mu \text{A}$ /mm, a high maximum current density of 820 mA/mm and low on-resistance ( ${R}_{ \mathrm{\scriptscriptstyle ON}}$ ) of 11.1 $\Omega \cdot \textsf {mm}$ . The FE device also shows good ${V}_{\textsf {th}}$ –temperature stability compared to the non-FE device results. Besides, a high current device with 40 A is also fabricated in this letter to demonstrate the feasibility of the proposed FEG-HEMT device for high power device application. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|