Physical and Electrical Characterization of WN Schottky Contacts on 4H-SiC
| Autor: | Anelia Kakanakova-Georgieva, C. Brylinski, Attila Sulyok, Ts. Marinova, György Radnóczi, Roumen Kakanakov, C. Arnodo, Béla Pécz, O. Noblanc, S. Cassette, Liliana Kassamakova |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
Mechanical Engineering Analytical chemistry Schottky diode chemistry.chemical_element Tungsten Condensed Matter Physics Dissociation (chemistry) chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Mechanics of Materials Sputtering Tungsten carbide Silicide General Materials Science Thermal stability |
| Zdroj: | Materials Science Forum. :817-820 |
| ISSN: | 1662-9752 |
| Popis: | WN has been deposited by reactive sputtering on 4H-SiC to make Schottky rectifiers. The physical properties of the interface have been studied by XPS and TEM for as-deposited, 800 and 1200 C annealed samples. The two former samples reveal steep interface with a metallic layer made of W and W{sub 2}N phases. No dissociation of the SiC is evidenced in these conditions. In the later one, tungsten silicide and tungsten carbide are evidenced. The rectifying properties are studied by I(V) measurements. Barrier height of 0.94 eV is measured for annealed samples up to 950 C and thermal stability is observed up to 350 C. (orig.) 4 refs. |
| Databáze: | OpenAIRE |
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