Observing relaxation in device quality InGaN templates by TEM techniques
| Autor: | Tim B. Eldred, Salah M. Bedair, Mostafa Abdelhamid, Nadia A. El-Masry, J. G. Reynolds, James M. LeBeau |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Diffraction Photoluminescence Materials science Physics and Astronomy (miscellaneous) chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Molecular physics Reciprocal lattice Template chemistry Lattice (order) 0103 physical sciences Scanning transmission electron microscopy 0210 nano-technology Spectroscopy Indium |
| Zdroj: | Applied Physics Letters. 116:102104 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.5139269 |
| Popis: | Device quality InGaN templates are synthesized using the semibulk (SB) approach. The approach maintains the film's 2D growth and avoids the formation of indium-metal inclusions. The strain relaxation processes of the grown InxGa1−xN templates are accompanied by variations in the indium content (x) and lattice parameters (a and c) across the InGaN template's thickness as the residual strain is continuously decreasing. This strain and lattice parameters' variation creates difficulties in applying standard x-ray Diffraction (XRD) and Reciprocal Space mapping (RSM) techniques to estimate the residual strain and the degree of the elastic strain relaxation. We used high-resolution High-angle annular dark-field scanning transmission electron microscopy and Energy-dispersive x-ray spectroscopy (EDS) to monitor the variations of the indium content, lattice parameters, and strain relaxation across the growing InxGa1−xN templates. We show that strain relaxation takes place by V-pit defect formation. Some of these V-pits are refilled by the GaN interlayers in the InxGa1−xN SB templates, while others propagate to the template surface. We present an alternative approach combining photoluminescence (PL) and EDS for estimating the degree of strain relaxation in these InxGa1−xN templates. The values obtained for the degree of relaxation estimated from TEM studies and PL measurements are within reasonable agreement in this study. Device quality InxGa1−xN templates with x ∼ 0.08, with a degree of relaxation higher than 70%, are achieved. |
| Databáze: | OpenAIRE |
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