Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs
| Autor: | Kuo-Nan Yang, Yeou-Ming Lin, Syun-Ming Jang, Mo-Chiun Yu, Mong-Song Liang, Douglas Yu, Hsin-Hui Huang, Ming-Jer Chen |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
Silicon business.industry Doping Electrical engineering Oxide chemistry.chemical_element Time-dependent gate oxide breakdown Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Gate oxide MOSFET Optoelectronics Electrical and Electronic Engineering business Quantum tunnelling Leakage (electronics) |
| Zdroj: | IEEE Transactions on Electron Devices. 48:1159-1164 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.925242 |
| Popis: | This paper examines the edge direct tunneling (EDT) of electron from n/sup +/ polysilicon to underlying n-type drain extension in off-state n-channel MOSFETs having ultrathin gate oxide thicknesses (1.4-2.4 nm). It is found that for thinner oxide thicknesses, electron EDT is more pronounced over the conventional gate-induced-drain-leakage (GIDL), bulk band-to-band tunneling (BTBT) and gate-to-substrate tunneling, and as a result, the induced gate and drain leakage is better measured per unit gate width. A physical model is for the first time derived for the oxide field E/sub OX/ at the gate edge by accounting for electron subband in the quantized accumulation polysilicon surface. This model relates E/sub OX/ to the gate-to-drain voltage, oxide thickness, and doping concentration of drain extension. Once fox is known, an existing DT model readily reproduces EDT I-V consistently and the tunneling path size extracted falls adequately within the gate-to-drain overlap region. The ultimate oxide thickness limit due to EDT is projected as well. |
| Databáze: | OpenAIRE |
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