Tantalum-gate SOI MOSFET's featuring excellent threshold voltage control in low-power applications

Autor:	Tadahiro Ohmi, T. Ushiki, Y. Hirano, Hisayuki Shimada
Rok vydání:	2002
Předmět:	Materials science business.industry Tantalum Electrical engineering chemistry.chemical_element Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY Power (physics) Threshold voltage chemistry Hardware_GENERAL MOSFET Hardware_INTEGRATEDCIRCUITS Optoelectronics business Hardware_LOGICDESIGN
Zdroj:	1995 IEEE International SOI Conference Proceedings.
Popis:	In this paper it is successfully demonstrated that Ta-gate SOI MOSFETs have excellent threshold voltage control in 1V applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3a4321a0002d3ae9e0ad823930e19b4d https://doi.org/10.1109/soi.1995.526478 Zobrazit plný text záznamu