The Metal–Organic Chemical Vapor Deposition of Lanthanum Nickelate Electrodes for Use in Ferroelectric Devices
| Autor: | Carl J. Anthony, M. A. Todd, Peter J. Wright, P. A. Lane, P. P. Donohue, Michael J. Crosbie, Dennis J. Williams, Jason C. Jones, Christopher Leslie Reeves, Philip J. Hirst |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Silicon biology Silicon dioxide Annealing (metallurgy) Process Chemistry and Technology Inorganic chemistry Analytical chemistry chemistry.chemical_element Surfaces and Interfaces General Chemistry Chemical vapor deposition biology.organism_classification chemistry.chemical_compound chemistry Electrical resistivity and conductivity Lanthanum Lanio Thin film |
| Zdroj: | Chemical Vapor Deposition. 9:87-92 |
| ISSN: | 1521-3862 0948-1907 |
| DOI: | 10.1002/cvde.200390007 |
| Popis: | Lanthanum nickelate layers have been deposited onto 100 mm diameter silicon/silicon dioxide and (0001) sapphire substrates by liquid-delivery metal-organic (MO) CVD using the precursors La(thd) 3 and Ni(thd) 2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedionato) dissolved in tetrahydrofuran and heptane. The LaNiO 3 (LNO) was deposited at 630°C in an oxidizing atmosphere, and the as-grown layers were highly crystalline and highly (110)-oriented on Si/SiO 2 . Electrical resistivity studies were performed and showed a dependence on the La/Ni ratio, the substrate used, and the post-deposition annealing conditions. A minimum electrical resistivity value of 300 μΩ cm was measured for LNO deposited on (0001) sapphire and rapidly annealed at 750°C. The resistivity values of the LNO layers deposited onto silicon/silicon dioxide were higher, with a minimum value of 1 mΩ cm. The rapid annealing at 750 °C resulted in cracking of some of the LNO layers deposited onto the silicon substrates. However, the layers that were nickel-rich withstood the annealing treatment better and showed little evidence of cracking. |
| Databáze: | OpenAIRE |
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