Carbon Ion Irradiation Damage Effects on Electrical Characteristics of Silicon PNP Power BJTs

Autor:	K. V. Madhu, C.M. Dinesh, K. S. Krishnakumar, Ramakrishna Damle, S.A. Khan, Ramani, Dinakar Kanjilal, M.C. Radhakrishna
Rok vydání:	2015
Předmět:	Materials science Silicon Doping chemistry.chemical_element Fluence Electronic Optical and Magnetic Materials Ion Base (group theory) chemistry Electronic engineering Irradiation Electrical and Electronic Engineering Atomic physics Safety Risk Reliability and Quality Tin Energy (signal processing)
Zdroj:	IEEE Transactions on Device and Materials Reliability. 15:101-108
ISSN:	1558-2574 1530-4388
Popis:	The 85 MeV $^{12}\hbox{C}^{6+}$ and 35 MeV $^{12}\hbox{C}^{3+} $ ion induced forward current gain degradation on 2N 6052 transistor is investigated by $I$ – $V$ measurements before and after irradiation. The decrease in gain for 85 MeV C-ion irradiated transistor is drastic, indicating the device is vulnerable for higher energy irradiation. An increase in the base current leading to degradation of the current gain may be due to displacement damage dose. $C$ – $V$ measurements estimate the effect of irradiation on the doping concentration of the devices. A plot of $(\hbox{1}/C^{2} ) $ versus base-emitter voltage shows that the doping concentration increases marginally upon irradiation. DLTS measurements indicate the cluster defects are produced after irradiation to a fluence of $\hbox{1}\times \hbox{10}^{12}\ \hbox{ions/cm}^{2}$ .
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3a02ee2d1f9efaef4ab08808b8b02bad https://doi.org/10.1109/tdmr.2015.2402212 Zobrazit plný text záznamu