Band diagrams of Si and Ge quantum wells via the 30-bandk∙pmethod
| Autor: | Frédéric Aniel, Guy Fishman, Soline Richard |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Physics
Condensed matter physics Scattering Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Brillouin zone symbols.namesake Effective mass (solid-state physics) Band diagram Density of states symbols Hamiltonian (quantum mechanics) Quantum well |
| Zdroj: | Physical Review B. 72 |
| ISSN: | 1550-235X 1098-0121 |
| Popis: | We report on a method to calculate the band diagram of quantum wells using a 30-band $\mathbf{k}\mathbf{∙}\mathbf{p}$ Hamiltonian. The subbands are calculated over the entire Brillouin zone. Such an approach is useful not only for a valence band description but also for a conduction band description when the energy minimum is not located at the center of the Brillouin zone as is the case for Si, SiGe, and Ge. The method also provides information about confinement in $L$ or $X$ valleys for III-V heterostructures. Such a formalism is useful for both optical calculation and for transport modeling. As an illustration, the scattering rates for holes confined in a quantum well are calculated. The accurate density of states provided by the 30-band $\mathbf{k}\mathbf{∙}\mathbf{p}$ method gives access to very different scattering rates as compared with those obtained following an effective mass approach. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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