CdZnTe graded buffer layers for HgCdTe/Si integration
| Autor: | J. K. Markunas, M. Groenert |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Diffraction
Materials science Reflection high-energy electron diffraction Solid-state physics Analytical chemistry Condensed Matter Physics Cadmium telluride photovoltaics Electronic Optical and Magnetic Materials Full width at half maximum Crystallography Etch pit density Electron diffraction Materials Chemistry Electrical and Electronic Engineering Dislocation |
| Zdroj: | Journal of Electronic Materials. 35:1287-1292 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-006-0256-0 |
| Popis: | To investigate the potential benefits of compositional grading for dislocation control in CdTe/Si growth, Cd1−xZnxTe buffer layers with x graded smoothly from 1 to 0 have been deposited on Si (211) surfaces. Growth has been characterized using reflection high-energy electron diffraction (RHEED), x-ray diffraction (XRD), and etch pit density measurements. XRD showed an increase in rocking curve full-width at half-maximum (FWHM) and global lattice tilt with decreasing x values. Tilt was also observed to increase as buffer growth temperature was increased. Final surface dislocation densities did not decrease below 7×106 cm−2. EPD surface dislocation measurements showed reduced dislocation densities and dislocation clustering along the $$[1\bar 10]$$ and $$[\bar 110]$$ lines for CdTe cap layers grown on partially graded Cd1−xZnxTe buffer layers with slow compositional grading rates. Samples grown with faster grading rates showed higher final EPD values, with dislocations clustering along the $$[31\bar 2]$$ and $$[\bar 1\bar 32]$$ lines. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink