Dielectronic recombination and energy loss for He-likeBr79ions channeled in a thin single crystal of Si

Autor:	Elliot P. Kanter, J.S. Geiger, G.C. Ball, J.S. Forster, W.G. Davies, Jacques Chevallier, H. Geissel, Jens Ulrik Andersen, John A. Davies
Rok vydání:	1996
Předmět:	Physics Electron density Valence (chemistry) Silicon chemistry Electron capture chemistry.chemical_element Atomic physics Valence electron Single crystal Atomic and Molecular Physics and Optics Recombination Ion
Zdroj:	Physical Review A. 54:624-635
ISSN:	1094-1622 1050-2947
DOI:	10.1103/physreva.54.624
Popis:	Dielectronic recombination of He-like {sup 79}Br ions channeled along the {l_angle}110{r_angle} axis of a thin Si crystal has been studied by the measurement of the charge-state distribution and x-ray production. The results of the charge-state measurements confirm that the probability of resonance capture is proportional to the valence electron density sampled by the ion. The energy-loss distributions of channeled ions are also in good agreement with theoretical estimates. {copyright} {ital 1996 The American Physical Society.}
Databáze:	OpenAIRE
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