Laser diodes (λ=0.98 μm) with a narrow radiation pattern and low internal optical losses
| Autor: | N. V. Fetisova, I. S. Tarasov, Nikita A. Pikhtin, D. B. Nikitin, P V Bulaev, A.A. Marmalyuk, Sergey O. Slipchenko, M. A. Khomylev, A. A. Padalitsa, I D Zalevskii |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Laser diode business.industry Physics::Optics Near and far field Vertical plane Heterojunction Radiation Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser law.invention Radiation pattern Condensed Matter::Materials Science Optics law Optoelectronics business Diode |
| Zdroj: | Technical Physics Letters. 29:980-983 |
| ISSN: | 1090-6533 1063-7850 |
| DOI: | 10.1134/1.1639448 |
| Popis: | Quantum-confined InGaAs/AlGaAs/GaAs heterostructures for laser diodes emitting at λ=0.98 μm, optimized to provide for reduced radiation divergence in the vertical plane and decreased internal optical losses, have been synthesized by metalorganic-hydride vapor-phase epitaxy. For the obtained laser diodes the far field pattern full width at half-maximum in the vertical plane falls within 16°–19°, the internal optical losses are about 0.7 cm−1, the internal quantum yield amounts to 97%, and the maximum continuous emission power reaches 8.6 W. |
| Databáze: | OpenAIRE |
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