X-ray photoelectron spectroscopy study of TiN films produced with tetrakis(dimethylamido)titanium and selected N-containing precursors on SiO2
| Autor: | J. P. Endle, J. M. White, Y. M. Sun, John G. Ekerdt |
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| Rok vydání: | 1998 |
| Předmět: |
Methylhydrazine
Inorganic chemistry chemistry.chemical_element Surfaces and Interfaces Chemical vapor deposition Condensed Matter Physics Surfaces Coatings and Films chemistry.chemical_compound Chemical state Aniline X-ray photoelectron spectroscopy chemistry Tin Tetrakis(dimethylamido)titanium Titanium |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 16:1262-1267 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.581271 |
| Popis: | Low pressure chemical vapor deposition TiN films were produced on SiO2 by codosing tetrakis(dimethylamido)titanium (TDMAT) with selected N-containing precursors. The films were grown at total pressures ranging from 10−4 to 10−3 Torr and temperatures between 523 and 773 K. Film composition and chemical states were determined, without exposure to ambient pressure, using x-ray photoelectron spectroscopy (XPS). Our primary goal was to evaluate how precursor ligands affect C and N incorporation into TiN films. To this end, methylhydrazine (MH), dimethylhydrazine (DMH), and 1-aminopiperidine (AP) were chosen for their steric differences, and t-butylamine (TBA) and aniline allowed us to assess how C and N incorporation are affected by the C–N bond in the aminolike compounds versus the N–N bond in the hydrazinelike compounds. At all growth temperatures, a decrease in the carbon concentration and an increase in the N concentration were observed for the MH and DMH cases when compared to TDMAT alone, while C content... |
| Databáze: | OpenAIRE |
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