Comparative Study of Uniform Versus Supersteep Retrograde MOSFET Channel Doping and Implications for 6-T SRAM Yield

Autor:	Marek Hytha, A. Yiptong, Xiangyang Huang, Nuo Xu, Nyles W. Cody, Robert John Stephenson, Nattapol Damrongplasit, Hideki Takeuchi, Tiehui Liu, Robert J. Mears
Rok vydání:	2013
Předmět:	Materials science business.industry Doping Electrical engineering Electronic Optical and Magnetic Materials Threshold voltage Planar MOSFET Optoelectronics Static random-access memory Electrical and Electronic Engineering business Cell yield Saturation (magnetic) Random dopant fluctuation
Zdroj:	IEEE Transactions on Electron Devices. 60:1790-1793
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2013.2253105
Popis:	The benefit of supersteep retrograde (SSR) channel doping for suppressing short-channel effects in planar bulk MOSFET performance is studied via technology computer-aided design simulation of devices with gate length Lg = 28 nm. It is found that drain-induced barrier lowering is reduced by more than 40%, and variation in saturation threshold voltage (σ VT,Sat), caused by random dopant fluctuation, is reduced by ~50%, with SSR channel doping. However, degraded drive current is observed for SSR channel doping due to enhanced body effect. Estimations of six-transistor static random access memory (SRAM) cell yield indicate that 33% reduction in the minimum operating voltage (VMIN,SRAM) can be achieved with SSR channel doping.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::39b48045074cbe0afa47433f217785e1 https://doi.org/10.1109/ted.2013.2253105 Zobrazit plný text záznamu