Stress and morphological development of CdS and ZnS thin films during the SILAR growth on (1 0 0)GaAs
| Autor: | Giedrius Laukaitis, Sigitas Tamulevičius, Seppo Lindroos, Markku Leskelä |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
General Physics and Astronomy 02 engineering and technology 01 natural sciences chemistry.chemical_compound Crystallinity Optics 0103 physical sciences Atomic layer epitaxy Thin film 010302 applied physics business.industry Surfaces and Interfaces General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Zinc sulfide Cadmium sulfide Surfaces Coatings and Films Carbon film chemistry Chemical engineering Crystallite 0210 nano-technology business Layer (electronics) |
| Zdroj: | Applied Surface Science. 185:134-139 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(01)00775-9 |
| Popis: | Cadmium sulfide and zinc sulfide films were grown on (1 0 0)GaAs substrate by successive ionic layer adsorption and reaction (SILAR) technique from aqueous precursor solutions at room temperature and normal pressure. The stress development of the thin films was characterized by laser interferometry as a function of the thickness of the films. The morphology and roughness of the films were monitored by atomic force microscopy. Additionally the crystallinity and crystallite size were analyzed by X-ray diffraction and composition by electron spectroscopy for chemical analysis. The CdS thin films had significantly higher stress level and also better crystallinity compared with ZnS thin films. Both films were polycrystalline and cubic, but the CdS thin films followed the substrate (1 0 0) orientation, whereas the ZnS films were (1 1 1) orientated. The roughness vs. film thickness curves of both films followed each other in shape, but the CdS films consisted of smaller particles. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect