A polymer gate dielectric for high-mobility polymer thin-film transistors and solvent effects

Autor:	Sang-Oak Shim, Hyewon Kang, S. Young Park, Hyunjung Lee, Joon-Hyung Park
Rok vydání:	2004
Předmět:	chemistry.chemical_classification Electron mobility Materials science Physics and Astronomy (miscellaneous) Gate dielectric Polymer Methacrylate Solvent chemistry Thin-film transistor Surface roughness Organic chemistry Composite material Solvent effects
Zdroj:	Applied Physics Letters. 85:3283-3285
ISSN:	1077-3118 0003-6951
Popis:	A polymer gate dielectric of poly(2-hydroxyethyl methacrylate) is introduced to the polymer thin-film transistor (TFT) with poly(3-hexylthiophene) as its active layer. With this polymer dielectric, the field-effect mobility is 0.1cm2V−1s−1. The solvent used in forming the active layer on the polymer dielectric film has pronounced effects on the device performance. These solvent effects are related to the roughness of the dielectric surface a solvent can induce. The solvent that induces the least roughness is found to be the most desirable for better device performance. The roughness can in turn be related to solubility parameter.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3997b24747586b9d09b54f183efa252e https://doi.org/10.1063/1.1805703 Zobrazit plný text záznamu