Combined optical, surface and nuclear microscopic assessment of porous silicon formed in HF-acetonitrile
| Autor: | J. W. Yu, Tzuen-Rong Yang, K. R. Padmanabhan, Zhe Chuan Feng, K. Li, Yuan Ping Feng |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
Photoluminescence Analytical chemistry Surfaces and Interfaces General Chemistry Condensed Matter Physics Porous silicon Surfaces Coatings and Films Blueshift symbols.namesake X-ray photoelectron spectroscopy Materials Chemistry symbols Spectroscopy Raman spectroscopy Raman scattering Visible spectrum |
| Zdroj: | Surface and Coatings Technology. 200:3254-3260 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/j.surfcoat.2005.07.025 |
| Popis: | A new type of HF solution, HF-acetonitrile (MeCN), has been employed to produce 10–30 μm thick porous silicon (P-Si) layers by photoelectrochemical etching of different types of Si wafers, Si(100), Si(111) and polycrystalline Si, with different resistivities. A combined optical, surface and nuclear microscopic assessment of these P-Si layers was performed using photoluminescence (PL), Raman scattering, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. With increasing resistivity of the Si(100) wafers, the P-Si layers show a slight blue shift of their visible light emission peak energy, an up shift of the peak position and a narrowing of the band width of the dominant Raman band, and a decrease in the amount of residual elemental Si on the surface. Those Si(111) wafers, etched in HF-MeCN, showed no porous structures and no visible light emission. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect