Properties of p-on-n heterojunctions made with MCT grown by MOCVD

Autor:	S. Oguz, J. Elliot, Vilnis G. Kreismanis, R.J. Olson, E. Sullivan, Donald L. Lee
Rok vydání:	1992
Předmět:	Inorganic Chemistry Materials science Band gap Doping Materials Chemistry Analytical chemistry Heterojunction Wafer Metalorganic vapour phase epitaxy Chemical vapor deposition Condensed Matter Physics Epitaxy p–n junction
Zdroj:	Journal of Crystal Growth. 124:664-669
ISSN:	0022-0248
DOI:	10.1016/0022-0248(92)90533-o
Popis:	Epitaxial layers of HgCdTe on CdTe substrates with low carrier concentrations (nH 100,000 cm2/V·s at 77 K for LWIR material) are routinely grown by the direct alloy growth technique in two separate MOCVD reactors with different designs. Excess carrier lifetimes meas approaching the Auger limit and show good spatial uniformity. As a further test of the quality of the material, wider band gap p-type cap layers were grown by LPE on the MOCVD grown layers and mesa diodes were fabricated. These devices exhibit state-of-the-art performance with R0A values of approximately 55 Ω cm2 at 77 K for 11.5 μm cut-off wavelength with good uniformity across the wafer.
Databáze:	OpenAIRE
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