The epitaxial growth of Ge single‐crystal films on a CaF2/sapphire substrate
| Autor: | M. Barkai, E. Grünbaum, Guy Deutscher |
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| Rok vydání: | 1991 |
| Předmět: |
Materials science
Reflection high-energy electron diffraction business.industry Surfaces and Interfaces Substrate (electronics) Condensed Matter Physics Epitaxy Surfaces Coatings and Films Optics Sapphire Optoelectronics Wafer Metalorganic vapour phase epitaxy Thin film business Molecular beam epitaxy |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 9:2642-2647 |
| ISSN: | 1520-8559 0734-2101 |
| Popis: | Ge(100) single‐crystal films, up to 30 μm thick, have been obtained by molecular‐beam epitaxy (MBE) on a CaF2(100) or BaF2(100) single‐crystal film substrate, 2000 A thick, grown in turn by MBE on a sapphire (1102) single‐crystal wafer. By dissolving the CaF2 or BaF2 in water, this double epitaxy procedure allowed the recovery and the subsequent reuse of the expensive sapphire substrate. This is of interest for large area devices, such as solar cells. The Ge single‐crystal films served as substrates for the growth of GaAs single‐crystals by metalorganic chemical vapor deposition (MOCVD). Furthermore, by doping during growth, tandem double energy gap photovoltaic junctions, which may be suitable for high‐efficiency solar cells, may be obtained. The growth conditions, orientation relationship, crystalline quality and microstructure of these films was examined by in situ reflection high‐energy electron diffraction (RHEED) and by transmission electron diffraction and microscopy and by scanning electron micro... |
| Databáze: | OpenAIRE |
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