Si resistivity modification by H+ irradiation
Autor: | O. Kozonushchenko, A. Vasiljev, M. Tolmachov, O. Kot, O. Kukharenko |
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Rok vydání: | 2017 |
Předmět: |
Materials science
Silicon Doping Radiochemistry Analytical chemistry chemistry.chemical_element 02 engineering and technology Conductivity 021001 nanoscience & nanotechnology 01 natural sciences Proton beam writing Ion chemistry Electrical resistivity and conductivity 0103 physical sciences Electrode Irradiation 010306 general physics 0210 nano-technology |
Zdroj: | 2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO). |
DOI: | 10.1109/elnano.2017.7939747 |
Popis: | By means of PBW (Proton Beam Writing) technology doped by phosphorus Si monocrystal was irradiated. The energy of ions H+ was 1.5 MeV. The integrated dose was 2∗1015 p/cm2. This treatment of the sample led to modification of the electrical properties of the material. Two layers were appeared under the surface of the silicon. The first one had higher resistivity than non-irradiated Si. The second one formed with much lower resistivity than non-irradiated Si. Electrophysical properties of both layers kept on stable for 180 days. |
Databáze: | OpenAIRE |
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