Self-assembly of heterojunction quantum dots
| Autor: | J. M. Shank, Krishnamurthy Mahalingam, J. J. Pitz, Kurt G. Eyink, David H. Tomich, L. Grazulis |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Fabrication Physics and Astronomy (miscellaneous) business.industry Nucleation Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Epitaxy Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound chemistry Quantum dot Transmission electron microscopy Optoelectronics Self-assembly business |
| Zdroj: | Applied Physics Letters. 88:163113 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.2197930 |
| Popis: | The fabrication of a self-assembled heterojunction quantum dot structure composed of multiple materials is reported. This structure consists of a composite dot formed of an initial core of one material which results from normal self-assembly, followed by the epitaxy of a crown composed of a similarly strained material. Finally the entire dot structure is capped with a barrier material closely lattice matched to the substrate. In this demonstration, self-assembled InAs quantum dots were first formed on a GaAs substrate and subsequently crowned with GaSb. The entire structure was encapsulated with a GaAs cap layer. Atomic force microscopy shows that additional nucleation between the InAs layers has been minimized and cross-sectional transmission electron microscopy shows the formation of the composite structure. |
| Databáze: | OpenAIRE |
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