3.9‐μm InAsSb/AlAsSb double‐heterostructure diode lasers with high output power and improved temperature characteristics

Autor:	George W. Turner, Z. L. Liau, H. K. Choi
Rok vydání:	1994
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Heterojunction Double heterostructure Cladding (fiber optics) Laser law.invention Active layer Semiconductor laser theory law Optoelectronics business Diode Molecular beam epitaxy
Zdroj:	Applied Physics Letters. 65:2251-2253
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.112779
Popis:	Double‐heterostructure diode lasers emitting at ∼3.9 μm have exhibited pulsed operation at temperatures up to 170 K and cw operation up to 105 K, with single‐ended cw output power of 30 mW at 70 K. The laser structure, grown on GaSb substrates by molecular‐beam epitaxy, has an InAsSb active layer and AlAsSb cladding layers. The lowest pulsed threshold current density is 36 A/cm2 obtained at 60 K. The characteristic temperature is 20 K over the entire temperature range.
Databáze:	OpenAIRE
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