Effectiveness of Si thin buffer layer for selective SiGe epitaxial growth in recessed source and drain for pMOS

Autor:	P. L. Cheng, Li-Shian Jeng, C. I. Liao, C. C. Chien, C. L. Yang, S. F. Tzou, Osbert Cheng, Cheng Tung Huang, Wensyang Hsu, Shyh-Fann Ting
Rok vydání:	2008
Předmět:	Electron mobility Materials science business.industry Thin layer Nucleation Condensed Matter Physics Epitaxy Buffer (optical fiber) PMOS logic Semiconductor Optoelectronics General Materials Science business Layer (electronics)
Zdroj:	Materials Chemistry and Physics. 107:471-475
ISSN:	0254-0584
DOI:	10.1016/j.matchemphys.2007.08.020
Popis:	Locally strained Si technology using embedded SiGe has been used to improve pMOSFET device performance through hole mobility enhancement. Embedded SiGe is achieved by selectively growing epitaxial SiGe film in recessed Si pMOSFET source and drain areas. Prior to selective SiGe epi growth, a thin layer of Si seed was employed to help nucleate following low-temperature selective SiGe epitaxial film in recessed source and drain areas. In combination with pre-epi wet clean and low-temperature chemical bake, use of Si seed resulted in improved SiGe film morphology and micro-loading effect, and further improved device performance.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3965ee33a905ec766939def8560d07d0 https://doi.org/10.1016/j.matchemphys.2007.08.020 Zobrazit plný text záznamu Full Text from ScienceDirect